The Core Technical Difficulties Of China's High-energy Ion Implanter Have Been Broken Through!
According to the report of "China Electric Power Co., Ltd.", the core technical difficulties of domestic high-energy ion implanters have been broken through! The first domestic high-energy ion implanter independently developed by the Beijing Shuoke Zhongkexin equipment research and development team of China Electronics Technology Co., Ltd. has successfully entered the domestic advanced integrated circuit production line.
As the key equipment for the manufacture of integrated circuit chips, the ion implanter equipment is extremely difficult to develop and has a weak research foundation, and its application is also very extensive. It can not only be used for ion implantation of large-scale integrated circuits, devices and semiconductor materials, but also Surface modification of metal materials and film making.
Among them, low-energy large-beam ion implanters are used in process logic, DRAM, 3D memory and CIS chip manufacturing, while high-energy ion implanters are mostly used in power devices, IGBTs, 5G RF, CIS, logic chips and other device preparation processes .
It is reported that the high-energy ion implanter is the most technically difficult type of ion implanter. It is considered to be the recognized "Mount Everest" in the field of ion implanter research and development, and is a key link in my country's integrated circuit manufacturing equipment industry chain that needs to be overcome urgently.
"China Electronics Technology" news pointed out that the R&D team of Beijing Shuoke Zhongkexin equipment has achieved independent innovation and development of a full spectrum of ion implanters such as medium beam current, large beam current, high energy, special applications and third-generation semiconductors, which has greatly reduced the number of ion implanters with international first-class gap.
