History Of Semiconductor Development
In 1833, British Baradei first found that the resistance of silver sulfide changes with temperature, which is different from that of ordinary metals. Under normal circumstances, the resistance of metals increases with the increase of temperature, but Baradei found that the resistance of silver sulfide materials decreases with the increase of temperature. This is the first discovery of a semiconductor phenomenon.
In 1839, Becquerel of France discovered that the junction between a semiconductor and an electrolyte produced a voltage when exposed to light. This became known as the photoluminescent volt effect. This was the second characteristic of semiconductors that was discovered.
In 1873, Smith of England discovered the photoconductance effect of selenium crystal material which increases the conductance under light, which is another characteristic of semiconductor. Although these four effects of semiconductors (the remnants of the jianxia Hall Effect -- the discovery of four associated effects) were discovered before 1880, the term semiconductor was first used probably in 1911 by Coneyberg and Weiss. It was not until December 1947 that Bell LABS completed the characterization of these four properties.
In 1874, Braun in Germany observed that the conductance of some sulfide is related to the direction of the applied electric field, that is, its conduction is directional. If a positive voltage is applied at both ends, it is conductive. If the polarity of the voltage is reversed, it will not conduct electricity. This is the rectifier effect of the semiconductor and the third characteristic of the semiconductor. In the same year, Schuster also discovered the rectification effect of copper and copper oxide.
The silicon wafer is cut in the laboratory
The silicon wafer is cut in the laboratory
In 2015, China announced the "Made in China 2025" strategy to cultivate the semiconductor industry. To this end, Chinese local governments are competing to attract domestic and foreign semiconductor companies with preferential policies.
Zhang Wei, a professor at the School of Microelectronics of Fudan University, and Liu Chunsen, a member of Zhou Peng's team, cut a silicon wafer in the laboratory on April 11, 2018. The team of Zhang Wei and Zhou Peng has realized the subversive prototype device of two-dimensional semiconductor quasi-non-volatile memory, and pioneered the third type of memory technology. According to a sales officer of Edwan Test, a 3D NAND mass production project in Wuhan, Hubei Province, which is being promoted by Yangtze River Storage Technology, a major Chinese semiconductor company, Uniglas, will be rapidly realized by the end of 2018 to 2019.
On April 24, 2018, the Nihon Keizai Shimbun predicted that it would start supplying cutting-edge 3D NAND flash memory chips to the market as early as the end of 2018. A glut of products in many industries, including LCD panels, could also lead to a drop in semiconductor prices. [2]
