Boron Nitride Ion Implantation Parts

principle:

Ion implantation is an important process in the production of semiconductors. Implanter systems dope wafers with foreign atoms to modify material properties such as conductivity or crystal structure.

The beam path is the center of an implanter system. Here the ions are generated, concentrated, greatly accelerated, and focused on the wafer at very high speeds.

The components and spare parts made from refractory metals help to ensure that this process is as efficient, precise, and free of impurities as possible.

product:

Temperatures up to 1400°C, strong electro-magnetic fields, aggressive process gases, and high mechanical forces are a problem for regular materials. If the heat resistant components are made of molybdenum, tungsten, graphite or ceramics, they provide corrosion resistance, material strength, good thermal conductivity and absolute purity.

One hundred or more components are used per beam path. They ensure that the ions are generated efficiently and are focused precisely on the wafer in the beam path without any impurities.