Tungsten parts for ion implantation component

Tungsten parts for ion implantation component are mainly used in semiconductor fields. The semiconductor field belongs to wafer manufacturing equipment, which is mainly used in the injection (doping) process of the wafer manufacturing process. The Tungsten parts for ion implantation component purpose is to make pure silicon with poor conductivity into a useful semiconductor by adding a small number of impurities.

Diversity: In principle any element can act as an implanted ion; The resulting structure is not limited by thermodynamic parameters (diffusion, solubility, etc.);

Do not change: do not change the original size and roughness of the workpiece, etc.; Suitable for all kinds of precision parts production of the last process;

Fastness: the implanted ions directly combine with the atoms or molecules on the surface of the material to form a modified layer. The modified layer has no clear interface with the base material, so the binding is firm and there is no shedding phenomenon.

Unlimited: The injection process can be carried out when the material temperature is below zero to hundreds of thousands of degrees. Surface strengthening can be performed on materials that cannot be processed by ordinary methods, such as plastics, steels with low tempering temperature, etc.

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